In this topic, you study Reverse Breakdown of PN Junction Diode – Definition & Theory.
A PN junction diode allows a very small amount of current called reverse saturation current, when it is reverse biased. This current is due to movement of minority carriers across the junction. This current is independent of the applied reverse voltage. If the applied reverse bias is increased to a very large value, large current will flow through the diode which causes damage to the junction. The voltage at which this happens is known as breakdown voltage (Vbr). The junction breakdown is avoided in normal applications. The reverse breakdown of a diode can take place due to avalanche breakdown and zener breakdown.
Fig. 1: Reverse breakdown of PN Junction Diode
