In this topic, you study the comparison of Power devices like BJT, MOSFET, and IGBT.
Parameters |
BJT |
MOSFET |
IGBT |
| Carriers type | Bipolar device | Majority carrier device | Bipolar device |
| Gate or base drive | Current controlled | Voltage Controlled | Voltage Controlled |
| Temperature coefficient of ON-state resistance | Negative | Positive | Positive |
| Applications | Inverters, Choppers, UPS, SMPS, induction motor drives. | Choppers, low power UPS, SMPS, brushless DC motor drives. | Inverters, UPS, SMPS, AC motor drives. |
| Switching Power loss | High | Low | Low |
| Input impedance | High | Low | Low |
| On state voltage drop and Conduction loss | Low | High | Low |
| Parallel operation | Not possible | Possible | Possible |
| Voltage and Current Rating | 1200 V and 800 A | 500 V and 140 A | 1200 V and 500 A |
| Switching Frequency Rating | (10 – 20) kHz | upto 1 MHz | upto 50 kHz |
